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| MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V = 50 A ID25 RDS(on) = 45 m N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient T C = 25C T C = 25C, pulse width limited by TJM T C = 25C Maximum Ratings 200 200 20 30 50 200 300 -55 ... +150 150 -55 ... +150 V V V V A A W C C C TO-247 AD (IXTH) D (TAB) TO-204 AE (IXTM) D G = Gate, S = Source, G Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C D = Drain, TAB = Drain Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l Symbol Test Conditions IGSS IDSS R DS(on) VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V TJ = 25C TJ = 125C 100 200 1 0.045 nA A mA IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % l VGS(th) VDS = VGS, ID = 250 A 2 4 V l VDSS VGS = 0 V, ID = 250 A 200 V l Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Applications Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers l l l l l l Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density 91534F(5/97) 1-4 IXTH 50N20 IXTM 50N20 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 32 4600 VGS = 0 V, VDS = 25 V, f = 1 MHz 800 285 18 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) 15 72 16 190 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 35 95 25 20 90 25 220 50 110 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD (IXTH) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Q g(on) Q gs Q gd R thJC R thCK VDS = 10 V; ID = 0.5 * ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 50N20 50 200 1.5 400 A A Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-204AE (IXTM) Outline V ns IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V Pins 1 - Gate 2 - Source Case - Drain Dim. A A1 b D e e1 Millimeter Min. Max. 6.4 11.4 1.53 3.42 1.45 1.60 22.22 10.67 11.17 5.21 5.71 Inches Min. Max. .250 .450 .060 .135 .057 .063 .875 .420 .440 .205 .225 .440 .151 .151 1.187 .495 .131 .655 .480 .165 .165 BSC .525 .188 .675 L 11.18 12.19 p 3.84 4.19 p 1 3.84 4.19 q 30.15 BSC R 12.58 13.33 R1 3.33 4.77 s 16.64 17.14 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXTH 50N20 IXTM 50N20 Fig. 1 Output Characteristics 100 90 80 70 60 50 40 30 20 10 0 5V 6V TJ = 25C VGS = 10V 9V 8V 7V Fig. 2 Input Admittance 100 90 80 70 60 50 40 30 20 10 0 TJ = 25C ID - Amperes 0 1 2 3 4 5 6 7 8 9 10 ID - Amperes 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts VGS - Volts Fig. 3 RDS(on) vs. Drain Current 125 TJ = 25C Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 2.25 RDS(on) - mOhms 100 RDS(on) - Normalized 2.00 1.75 1.50 1.25 1.00 ID = 40A 75 VGS = 10V VGS = 15V 50 25 0 25 50 75 100 125 150 175 200 0.75 -50 -25 0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 80 70 60 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 1.1 BVCES VGS(th) BV/VG(th) - Normalized 25 50 75 100 125 150 ID - Amperes 50 40 30 20 10 0 -50 50N20 1.0 0.9 0.8 0.7 0.6 42N20 -25 0 0.5 -50 -25 0 25 50 75 100 125 150 TC - Degrees C TJ - Degrees C (c) 2000 IXYS All rights reserved 3-4 IXTH 50N20 IXTM 50N20 Fig.7 Gate Charge Characteristic Curve 14 12 VDS = 100V ID = 50A IG = 10mA Fig.8 Forward Bias Safe Operating Area 10s 100 Limited by R DS(on) 100s ID - Amperes VGE - Volts 10 8 6 4 2 0 0 25 50 75 100 125 150 175 200 1ms 10 10ms 100ms 1 1 10 100 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves 4500 4000 Ciss Fig.10 Source Current vs. Source to Drain Voltage 50 40 Capacitance - pF 3500 ID - Amperes 3000 2500 2000 1500 1000 500 0 0 5 Crss Coss f = 1 MHz VDS = 25V 30 TJ = 125C 20 10 0 0.2 TJ = 25C 10 15 20 25 0.4 0.6 0.8 1.0 VDS - Volts VSD - Volts Fig.11 Transient Thermal Impedance Thermal Response - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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